发明名称 |
Non-volatile memory devices and programming methods thereof including moving electrons through pad oxide layers between charge trap layers |
摘要 |
Non-volatile memory devices and methods of programming a non-volatile memory device in which electrons are moved between charge trap layers through a pad oxide layer are provided. The non-volatile memory devices include a charge trap layer on a semiconductor substrate and storing electrons, a pad oxide layer on the first charge trap layer, and a second trap layer on the pad oxide layer and storing electrons. In a programming mode in which data is written, the stored electrons are moved between a first position of the first charge trap layer and a first position of the second charge trap layer through the pad oxide layer or between a second position of the first charge trap layer and a second position of the second charge trap layer through the pad oxide layer.
|
申请公布号 |
US2009034341(A1) |
申请公布日期 |
2009.02.05 |
申请号 |
US20080078141 |
申请日期 |
2008.03.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SUNG JUNG-HUN;SEOL KWANG-SOO;SHIN WOONG-CHUL;PARK SANG-JIN;CHOI SANG-MOO |
分类号 |
G11C16/04;H01L29/792 |
主分类号 |
G11C16/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|