| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of an epitaxial wafer for manufacturing the epitaxial wafer, having less crystal defects and less characteristic failures by preventing missing of As in the substrate. SOLUTION: In this manufacturing method for the epitaxial wafer, a recess 5 for holding a GaAs substrate 4 is formed in a slider 3 which forms the bottom panel of a raw material solution holder 2, and the GaAs substrate 4 is held in the recess 5 and is subjected to epitaxial growth, a GaAs polycrystal 10 is placed in the recess 5, and epitaxial growth is carried out, while making As of the GaAs polycrystal 10 sublimate at its growth. COPYRIGHT: (C)2009,JPO&INPIT
|
