| 摘要 |
Charged-particle beam lithography method and system. The lithography system has a map creation unit and a lithographic data creation unit. The map creation unit creates a proximity effect correction amount map from pattern data supplied from a pattern data file, pattern layout information, a foggy error correction amount map, loading effect correction amount maps, a process error correction amount map, a transfer error correction amount map, proximity effect correction parameters, and a proximity effect correction map. The lithographic data creation unit creates lithographic data based on the pattern data from the pattern data file, creates shot time data based on the proximity effect correction amount map from the map creation unit, and attaches the created shot time data to the lithographic data.
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