| 摘要 |
A method for minimizing fabrication defects in ballast contact to a conductor in monolithically integrated semiconductor devices includes forming a sloping sidewall (318, 424) in both an insulating layer (106, 718) overlying a conductive layer (104, 714) by etching with a an RF biased fluorine based chemistry and an RF biased chlorine based chemistry, respectively, as defined by a single resist layer (108) having a sloped sidewall (212). A ballast layer (526, 726) is deposited on the structure (100, 700) and metal contacts (632, 634, 636, 638, 722) are disposed on the ballast layer (526, 722).
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