| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein an insulating film having compression stress and an insulating film having tensile stress do not offset the stress with each other. SOLUTION: The semiconductor device is provided with a first transistor, a first stress insulating film 20A, a first insulating film 21A and a second insulating film 21B. The first transistor is formed in the first active region 11A of a semiconductor substrate 10 and is provided with a first gate electrode 14A. The first stress insulating film 20A is formed so as to cover the first gate electrode 14A and applies the stress to the channel region of the first transistor. The first insulating film 21A is formed in contact on the first stress insulating film 20A and the upper surface is flattened. The second insulating film 21B is formed in contact on the first insulating film 21A. COPYRIGHT: (C)2009,JPO&INPIT
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