发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit capable of maintaining characteristics of transistors in a circuit in which a plurality of the transistors are cascaded. SOLUTION: An inverter circuit 1 includes P-type MOS transistors 10, 11 and two N-type MOS transistors 12, 13 connected in series. The P-type transistor 10 is connected to a high-potential power source V<SB>H</SB>, and the N-type MOS transistor 13 is connected to a low-potential power source V<SB>L</SB>. Gates of the MOS transistors 10-13 are connected to an input signal line 19. Furthermore, the inverter circuit 1 includes a P-type MOS transistor 17 connecting a node 14 of the P-type MOS transistors 10 and 11 and the input signal line 19, and an N-type MOS transistor 18 connecting a node 15 of the N-type transistors 12 and 13 and the input signal line 19. Gates of the P-type MOS transistor 17 and the N-type MOS transistor 18 are connected to an output signal line 20 of the inverter circuit 1. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009027584(A) 申请公布日期 2009.02.05
申请号 JP20070190536 申请日期 2007.07.23
申请人 TOPPOLY OPTOELECTRONICS CORP 发明人 YAMASHITA YOSHITARO
分类号 H03K19/0944;G02F1/136;H01L21/822;H01L21/8238;H01L27/04;H01L27/092;H03K19/0185 主分类号 H03K19/0944
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