发明名称 VAPOR-PHASE GROWING DEVICE AND VAPOR-PHASE GROWING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a vapor-phase growing device, and a vapor-phase growing method, using the device provided with a liner for suppressing generation of by-products by gas, before and after the formation of a vapor-phase growing film. SOLUTION: The vapor-phase growing device 100 comprises a chamber 101, a gas supply part 102 for supplying process gas 110, and a gas exhaust part 108 for exhausting the gas from an inside of the chamber 101. The inner wall part 130 of the chamber 101 is structured so as to have different properties between an upper liner 131 and a lower liner 132, and the lower liner 132 is formed of a base material which easily absorb thermal energy and has a high heat-accumulating properties, as compared with the upper liner 130. Thus, generation of the by-products on the whole surface of the liner 130, caused by the process gas 110 and produced gas 112, can be suppressed. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009027021(A) 申请公布日期 2009.02.05
申请号 JP20070189735 申请日期 2007.07.20
申请人 NUFLARE TECHNOLOGY INC 发明人 HIRATA HIRONOBU;SUZUKI KUNIHIKO
分类号 H01L21/205;C23C16/44;C30B25/08;C30B29/06 主分类号 H01L21/205
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