| 摘要 |
Techniques associated with providing multiple gate insulator thickness for a semiconductor device are generally described. In one example, an apparatus includes a semiconductor fin having an impurity introduced to at least a first side of the fin, a first oxide having a first thickness coupled with the first side of the fin, and a second oxide having a second thickness coupled with a second side of the fin, the second thickness being different from the first thickness as a result of the impurity introduced to the first side of the fin.
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