| 摘要 |
<p>A process for producing thin-film device, and devices produced by the process are provided to prevent damage of the substrate and to obtain the inorganic film of good quality. The substrate(10) for the thin film element(1) is prepared(a). The heat buffer layer(50) is formed on the substrate(b). The light shielding layer(20) is formed to prevent damage of the substrate caused by the short wavelength light(L)(C). The non-anneal film(30a) consisting of the non-single crystal film is patterned on the substrate including the heat buffer layer(d). By using the short wavelength light, the non-anneal film is annealed and then the inorganic film(30) is formed(e).</p> |
