| 摘要 |
A gallium nitride crystal growth method, gallium nitride crystal substrate, epi-wafer manufacturing method, and epi-wafer are provided to prevent the crack generated when forming the thin film and to grow thick gallium nitride crystal. The gallium nitride crystal is grown by hydride vapor phase epitaxy growth method, using the carrier gas, the GaN raw material, and the silicon dopant gas. The dew point of the carrier gas is less than -60°C(S2). The partial pressure of the carrier gas is 0.56atm over or 0.92 atm less.
|
