| 摘要 |
<p>A method of manufacturing the thin film semiconductor device is provided to obtain the high performance conversion of the crystalline silicon thin film by forming the crystalline silicon thin film on the substrate in the low substrate temperature. The process chamber(101) is installed in the ground state. The exhaust pipe (101a) is provided for exhausting the gas of inside. The grounded stage(103) fixes the substrate in the process chamber. The upper electrode(105) disposed in the stage and includes the shower head for supplying the process gas within the process chamber. The radio frequency power(107) is connected to the upper electrode. The temperature controller for heating and maintaining the temperature of the substrate can be installed at the stage.</p> |
