发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURIG THE SAME |
摘要 |
A TFT(Thin Film Transistor) substrate and a manufacturing method thereof are provided to accomplish high resolution and a large size of a display device, and to simplify a manufacturing process. A substrate is equipped. A first line pattern(180) is formed on the substrate. A first insulating film is formed to cover the first line pattern on the substrate equipped with the first line pattern. A semiconductor film pattern(123) is formed on the first insulating film. A second insulating film is formed on the first insulating film equipped with the semiconductor film pattern, and has connection holes(132,134) that expose a portion of the semiconductor film pattern. A second line pattern(190) is formed on the second insulating film, and a portion thereof is connected to the semiconductor film pattern through the connection holes of the second insulating film.
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申请公布号 |
KR20090011704(A) |
申请公布日期 |
2009.02.02 |
申请号 |
KR20070075562 |
申请日期 |
2007.07.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, EUN GUK;JEONG, CHANG OH;LEE, JE HUN;KIM, DO HYUN;LIM, SOON KWON |
分类号 |
G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
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地址 |
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