发明名称 THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURIG THE SAME
摘要 A TFT(Thin Film Transistor) substrate and a manufacturing method thereof are provided to accomplish high resolution and a large size of a display device, and to simplify a manufacturing process. A substrate is equipped. A first line pattern(180) is formed on the substrate. A first insulating film is formed to cover the first line pattern on the substrate equipped with the first line pattern. A semiconductor film pattern(123) is formed on the first insulating film. A second insulating film is formed on the first insulating film equipped with the semiconductor film pattern, and has connection holes(132,134) that expose a portion of the semiconductor film pattern. A second line pattern(190) is formed on the second insulating film, and a portion thereof is connected to the semiconductor film pattern through the connection holes of the second insulating film.
申请公布号 KR20090011704(A) 申请公布日期 2009.02.02
申请号 KR20070075562 申请日期 2007.07.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, EUN GUK;JEONG, CHANG OH;LEE, JE HUN;KIM, DO HYUN;LIM, SOON KWON
分类号 G02F1/136 主分类号 G02F1/136
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