| 摘要 |
A semiconductor memory device is provided to shorten an access time by enhancing conductivity between a memory cell and a sense amplifier. A semiconductor memory device includes at least one bit line(BL,BLb), a plurality of memory cells(ML,MR), and a sense amplifier(SA). The memory cells are connected to the bit lines in order to supply sustaining potential. The sense amplifier is connected to the bit lines in order to amplify the sustaining potential and to supply the sustaining potential to the bit lines. A switch is installed at the bit lines between the memory cells and the sense amplifier in order to change continuously and freely conductivity. A switch control circuit changes the conductivity of the switch according to an access request signal.
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