PHASE CHANGE MATERIAL CONTAINING CARBON AND MEMORY DEVICE COMPRISING THE SAME AND METHOD OF OPERATING THE MEMORY DEVICE

摘要

Carbon containing phase change material, a memory device including the same and an operation method thereof are provided to use a carbon containing IST layer as a phase-change layer which is maintained in a single phase, thereby ensuring thermal stability and lowering reset currents as preventing intercell interference caused by heat. Phase change material comprises a major compound and additive. The major compound is In-Sb-Te. The additive uses carbon which is added as much as it can maintain the phase change material in a single phase. The content(a) of the carbon can be 0.005<=a<=0.30 atom %. The additive more includes nitrogen, oxygen, boron or transition metal. Carbide can be used instead of the carbon. The indium(In) can be substituted by a group third element. The antimony(Sb) can be substituted by a group V element. The tellurium(Te) can be substituted by group sixth element.