TRANSISTOR ELEMENT, ITS MANUFACTURING METHOD, LIGHT EMITTING ELEMENT, AND DISPLAY

摘要

Provided is a transistor element capable of a large-current modulation with a low voltage between an emitter electrode and a collector electrode. Also provided are a manufacturing method of the transistor element, a light emitting element and a display using the transistor element. The transistor element includes an emitter electrode (3) and a collector electrode (2). Semiconductor layers (5) (5A, 5B) and a sheet-shaped electrode (4) are arranged between the emitter electrode (3) and the collector electrode (2). The semiconductor layers (5) are arranged between the emitter electrode (3) and a base electrode (4) and between the collector electrode (2) and the base electrode (4), which constitute a second semiconductor layer (5B) and a first semiconductor layer (5A), respectively. Furthermore, the thickness of the base electrode is preferably 80 nm or below. Moreover, a dark current suppression layer is provided between the emitter electrode and the base electrode or between the collector electrode and the base electrode.