| 摘要 |
A semiconductor device manufacturing method is provided to partly form an oxide film having a dielectric rate lower than a nitride film on a side wall of patter and reduce unnecessary parasitic capacitance, thereby improving device characteristics. A conductive pattern(13) including at least a metal electrode is formed on a substrate(11) including an interlayer insulating film(12). A side wall of the metal electrode is oxidized as much as a partial thickness. A sidewall protection layer(15) is formed in the side wall of the conductive pattern of which the partial thickness is oxidized. In order to reclaim the conductive pattern interval in which the sidewall protection layer is formed, an interlayer insulating film(16) is formed. Nitrogen is added to oxygen gas so as to oxidize the side wall of the metal electrode as much as the partial thickness. A rate of the oxygen gas to nitrogen is about 2~6:1(flow ratio). The side wall of the metal electrode is oxidized as much as the partial thickness at a chamber pressure of 300mT~2000mT. The metal electrode is oxidized as much as a thickness of 50Å~150Å.
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