| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a relatively low-temperature and simple treatment process capable of obtaining the clean surface of a nitride semiconductor comparable to a high temperature hydrogen plasma irradiation result. <P>SOLUTION: A method of cleaning the surface of the nitride semiconductor includes: a step of removing a natural oxide film by irradiating atomic hydrogen to the surface of the nitride semiconductor (B<SB>z</SB>Al<SB>x</SB>Ga<SB>1-x-y-z</SB>In<SB>y</SB>N<SB>1-p-q</SB>P<SB>p</SB>As<SB>q</SB>, provided that 0≤x, y, z, p, q<1 and x+y+z<1, p+q<1); a step of forming an artificial oxide film by irradiating oxygen plasma; a step of selectively removing the artificial oxide film by wet-etching; a step of forming a surface protective layer by executing the sulfur treatment of the surface of the nitride semiconductor from which the artificial oxide film is removed; and a step of removing the surface protective layer by thermal treatment. <P>COPYRIGHT: (C)2009,JPO&INPIT |
