发明名称 NEGATIVE VOLTAGE DETECTION CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT EMPLOYING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a negative voltage detection circuit which is hardly affected by temperature variation and variations in manufacturing process and can detect negative voltages with higher precision. SOLUTION: The negative voltage detection circuit includes a circuit 37 for generating a reference current Iref, a resistive dividing circuit 38 having one end to which a negative voltage to be detected is applied and the other end to which a mirror current of the reference current is supplied, and a first comparator 32 for comparing a first voltage Vref corresponding to the reference current with a second voltage at the other end when a mirror current flows. The reference current generation circuit includes first and second circuit sections for generating third and fourth voltages having negative and positive temperature coefficients, respectively, based on a current supplied from a current mirror circuit, a third circuit section for generating the first voltage, and a second comparator 31 for controlling the current mirror circuit such that a voltage difference between the third voltage and the fourth voltage matches. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009016929(A) 申请公布日期 2009.01.22
申请号 JP20070173242 申请日期 2007.06.29
申请人 TOSHIBA CORP 发明人 SHINBA YOSHIAKI
分类号 H03K19/00;H01L21/822;H01L27/04 主分类号 H03K19/00
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