| 摘要 |
<p>A semiconductor device and a manufacturing method thereof are provided to reduce a process cost by redesigning a mask for forming salicide. A gate pattern(121) is formed on a semiconductor substrate. A first impurity implantation region and a second impurity implantation region are formed on the semiconductor substrate of both sides of the gate pattern. At least part of one of the first impurity implantation region and the second impurity implantation region is covered with a salicide prevention film pattern(125). An insulating film is formed on the substrate. A first hole(131) is formed on the insulating film and the salicide prevention film pattern is exposed. A second hole(132) is formed on the insulating film and at least one of the first impurity implantation region and the second impurity implantation region is exposed. A first wiring is contacted with the salicide prevention film pattern through the first hole.</p> |
