| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a transistor which has a sufficiently fast operation speed on an arbitrary base body by forming a single-crystal semiconductor thin film on the base body which is made not of single crystal such as glass and plastic, and then to form an integrated circuit on the arbitrary base body. SOLUTION: The semiconductor thin film, which has uniform crystal orientation over the entire surface of the base body, is formed by: forming on the base body an orientation intermediate layer having uniform crystal orientation over the entire surface of the base body; forming a semiconductor thin film in an amorphous or polycrystalline state thereupon; and annealing the semiconductor thin film under suitable conditions. COPYRIGHT: (C)2009,JPO&INPIT
|
