发明名称 |
TRANSISTOR WITH DIFFERENTLY DOPED STRAINED CURRENT ELECTRODE REGION |
摘要 |
A transistor is formed by providing a semiconductor layer (103) and forming a control electrode (105) overlying the semiconductor layer. A portion of the semiconductor layer is removed lateral to the control electrode to form a first recess (201) and a second recess (203) on opposing sides of the control electrode. A first stressor (301) is formed within the first recess and has a first doping profile. A second stressor (303) is formed within the second recess and has the first doping profile. A third stressor (401) is formed overlying the first stressor. The third stressor has a second doping profile that has a higher electrode current doping concentration than the first profile. A fourth stressor (403) overlying the second stressor is formed and has the second doping profile. A first current electrode and a second current electrode of the transistor include at least a portion of the third stressor and the fourth stressor, respectively. |
申请公布号 |
WO2009011997(A1) |
申请公布日期 |
2009.01.22 |
申请号 |
WO2008US66669 |
申请日期 |
2008.06.12 |
申请人 |
FREESCALE SEMICONDUCTOR INC.;ZHANG, DA;FOISY, MARK C. |
发明人 |
ZHANG, DA;FOISY, MARK C. |
分类号 |
H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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