| 摘要 |
Provided is a sintered silicon wafer characterized in that a ratio [formula (1): I(220)/I(111)], i.e., a ratio of the strength of a (220) phase to that of a (111) phase measured by x-ray diffraction, is 0.5 or more but not more than 0.8, and a ratio [formula (2): I(311)/I(111)], i.e., a ratio of the strength of a (311) phase to that of the (111) phase measured by x-ray diffraction is 0.3 or more but not more than 0.5. The sintered silicon wafer having a smooth surface has a surface roughness equivalent to that of a single crystal silicon. |
