| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing high permittivity film for a device such as a MOSFET. SOLUTION: A HfSiO film 104 is formed by sputtering a Hf metal film 103 on a SiO<SB>2</SB>film (or a SiON film) 102 on a Si wafer 101. A TiO<SB>2</SB>film 106 is formed by sputtering a Ti metal film 105 on the HfSiO film 104 and subjecting the Ti metal film 105 to a thermal oxidation treatment. A TiN metal film 107 is deposited on the TiO<SB>2</SB>film 106. The series of treatments are performed continuously, without exposing the films and the wafer to atmospheric air. The resultant TiN/TiO<SB>2</SB>/HfSiO/SiO<SB>2</SB>/Si structure satisfies the conditions: EOT<1.0 nm, low leakage current, and hysteresis<20 mV. COPYRIGHT: (C)2009,JPO&INPIT
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