SOLID-STATE IMAGING ELEMENT, CAMERA MODULE USING SOLID-STATE IMAGING ELEMENT, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a back irradiation solid-state imaging element which can be tested in a wafer state, and can facilitate a test.

SOLUTION: The solid-state imaging element is formed by arranging an imaging pixel part on which a plurality of pixels including photoelectric conversion elements and field-effect transistors respectively are arranged, and a peripheral circuit part of the imaging pixel part on a semiconductor substrate 32. A wiring layer for driving the field effect transistors of the imaging pixel part is formed on a first surface side of the semiconductor substrate, and a light receiving surface of the photoelectric conversion element is arranged on a second surface side of the semiconductor substrate. A first terminal 17 exposed from the semiconductor substrate is provided on the second surface side of the semiconductor substrate.

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