发明名称 |
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME |
摘要 |
An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate 10; a semiconductor multilayer structure 100 formed on a principal face of the n-GaN substrate 10, the semiconductor multilayer structure 100 including a p-type region and an n-type region; a p-side electrode 32 which is in contact with a portion of the p-type region included in the semiconductor multilayer structure 100; and an n-side electrode 34 provided on the rear face of the n-GaN substrate 10. The rear face of the n-GaN substrate includes a nitrogen surface, such that a carbon concentration at an interface between the rear face and the n-side electrode 34 is adjusted to 5 atom % or less.
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申请公布号 |
US2009022193(A1) |
申请公布日期 |
2009.01.22 |
申请号 |
US20060908430 |
申请日期 |
2006.03.09 |
申请人 |
HASEGAWA YOSHIAKI;SUGAHARA GAKU;ANZUE NAOMI;ISHIBASHI AKIHIKO;YOKOGAWA TOSHIYA |
发明人 |
HASEGAWA YOSHIAKI;SUGAHARA GAKU;ANZUE NAOMI;ISHIBASHI AKIHIKO;YOKOGAWA TOSHIYA |
分类号 |
H01S5/343;H01L33/00 |
主分类号 |
H01S5/343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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