发明名称 STACKED MULTILAYER STRUCTURE AND MANUFACTURING METHOD THEREOF
摘要 A stacked multilayer structure according to an embodiment of the present invention comprises: a stacked layer part including a plurality of conducting layers and a plurality of insulating layers, said plurality of insulating layers being stacked alternately with each layer of said plurality of conducting layers, one of said plurality of insulating layers being a topmost layer among said plurality of conducting layers and said plurality of insulating layers; and a plurality of contacts, each contact of said plurality of contacts being formed from said topmost layer and each contact of said plurality of contacts being in contact with a respective conducting layer of said plurality of conducting layers, a side surface of each of said plurality of contacts being insulated from said plurality of conducting layers via an insulating film.
申请公布号 US2009020744(A1) 申请公布日期 2009.01.22
申请号 US20080163145 申请日期 2008.06.27
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MIZUKAMI MAKOTO;KAMIGAICHI TAKESHI
分类号 H01L45/00;H01L21/4763;H01L23/52 主分类号 H01L45/00
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