| 摘要 |
A method of fabricating a semiconductor device includes forming first spacers formed of a TEOS layer and second spacers formed of a first nitride layer on sidewalls of a gate electrode formed on a semiconductor substrate, and then forming source/drain regions in the semiconductor substrate using the first and second spacers and the gate electrode as masks, and then removing the second spacers, and then depositing a second nitride layer on an entire surface of the semiconductor substrate, and then implanting ions into the second nitride layer to generate compressive stress, and then etching the second nitride layer to form barrier nitride layers on the side walls of the first spacers. Because the barrier nitride has compressive stress, it is possible to prevent the movement of mobile ions, minimize influence on charge loss and charge gain in a flash memory device, and enhance a retention characteristic.
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