发明名称 |
Solid-state timing device using a floating-gate transistor |
摘要 |
<p>An aging device according to an embodiment of the present invention includes a semiconductor substrate (11), first and second diffusion layers (11A, 11B) provided in a first element region (AA1), a floating gate (14) provided above a channel region between the first and second diffusion layers (11A, 11B), and a control gate electrode (16) provided beside the floating gate (14) with an interval in the lateral direction. A coupling capacitance between the floating gate (14) and the control gate electrode (16) is larger than a coupling capacitance between the floating gate (14) and the semiconductor substrate (11).</p> |
申请公布号 |
EP2017880(A2) |
申请公布日期 |
2009.01.21 |
申请号 |
EP20080160605 |
申请日期 |
2008.07.17 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
WATANABE, HIROSHI;KINOSHITA, ATSUHIRO;KOBAYASHI, SHIGEKI;HAGISHIMA, DAISUKE |
分类号 |
H01L21/336;G04F10/10;G04F13/00;G11C16/04;H01L21/8247;H01L29/423;H01L29/788 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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