SEMICONDUCTOR QUANTUM DOT ELEMENT, METHOD OF FORMING SEMICONDUCTOR QUANTUM DOT ELEMENT, AND SEMICONDUCTOR LASER USING SEMICONDUCTOR QUANTUM DOT ELEMENT

摘要

PROBLEM TO BE SOLVED: To form a plurality of semiconductor quantum dots having heights equivalent to one another on a compound semiconductor substrate in order to control a band gap of the semiconductor quantum dots in a wide range. SOLUTION: A semiconductor quantum dot element 1 includes the compound semiconductor substrate 2, the plurality of semiconductor quantum dots 3 formed on the compound semiconductor substrate 2, and is characterized in that the plurality of semiconductor quantum dots 3 are formed to gradually reduce the diameters thereof toward a peripheral side from the center of the compound semiconductor substrate 2 and to set the heights thereof nearly constant. COPYRIGHT: (C)2009,JPO&INPIT