| 摘要 |
<p>A high dielectric capacitor, a manufacturing method thereof and a semiconductor device manufacturing method including the same are provided to increase an effective area between a bottom electrode and a high dielectric layer pattern, thereby increasing electrostatic capacity of the high dielectric capacitor. A high dielectric capacitor comprises a bottom electrode(142) arranged on a substrate(10), a high dielectric layer pattern(154) arranged on the bottom electrode, and an upper electrode(156) arranged in the high dielectric film pattern. At this time, the bottom electrode has a rounded surface between the side and the upper side and between the side and the upper side. A conductive construct(100), an insulating layer arranged on the conductive construct, and a contact plug(126) electrically connected to the conductive construct as passing through the insulating layer are arranged on the substrate. The bottom electrode is arranged on the contact plug and insulating layer. The bottom electrode comprises a first bottom electrode(144) including metal-nitride as being arranged on the contact plug and insulating layer, and a second bottom electrode(146) including at least one selected from a group consisting of metal, metal oxide and metal alloy as being arranged on the first bottom electrode.</p> |
