| 摘要 |
A Schottky diode comprising two terminals, an anode (20) and a cathode (21), wherein a first terminal (8) comprises a metal or a metal suicide or is essentially metallic, and the second terminal (11) is made from a semiconductor material, wherein at least a portion of the edge of the first terminal is in close proximity to, or in contact with, a conductive material (2). The conductive material can constitute a guard ring around the first terminal and be of polycrystalline silicon or polysilicon in lightly doped or undoped variants. Compared to in substrate doped region guard-rings reverse bias leakage is lowered since there is not formed a pnp bipolar transistor with parasitic bipolar leakage from the anode to the p-type substrate (12). The guard ring may be connected to the anode or it may be electrically connected separately to make it possible to bias it differently by applying a different voltage than to the anode. Alternatively the guard ring can be unconnected to form a floating guard ring which will automatically find the best potential. |
