发明名称 Offset correction techniques for positioning substrates
摘要 A method for calculating a process center for a chuck in a processing chamber is provided. The method includes generating pre-processing and post-processing measurement data points, which is perform by measuring thickness of a film substrate at a set of orientations and a set of distances from a geometric center of the substrate. The method also includes comparing the pre-processing and post-processing measurement data points to calculate a set of etch depth numbers. The method further includes generating etch profiles for the set of orientations. The method yet also includes extrapolating a set of radiuses, which is associated with a first etch depth, from the etch profiles. The method yet further includes generating an off-centered plot, which is a graphical representation of the set of radiuses versus the set of orientations. The method more over includes calculating the process center by applying a curve-fitting equation to the off-centered plot.
申请公布号 US7479236(B2) 申请公布日期 2009.01.20
申请号 US20060612355 申请日期 2006.12.18
申请人 LAM RESEARCH CORPORATION 发明人 CHEN JACK;BAILEY, III ANDREW D;MOORING BEN;CAIN STEPHEN J.
分类号 G01L21/30;G05B15/00 主分类号 G01L21/30
代理机构 代理人
主权项
地址