发明名称 |
Power junction field effect power transistor with highly vertical channel and uniform channel opening |
摘要 |
A semiconductor vertical junction field effect power transistor formed by a semiconductor structure having top and bottom surfaces and including a plurality of semiconductor layers with predetermined doping concentrations and thicknesses and comprising at least a bottom layer as drain layer, a middle layer as blocking and channel layer, a top layer as source layer. A plurality of laterally spaced U-shaped trenches with highly vertical side walls defines a plurality of laterally spaced mesas. The mesas are surrounded on the four sides by U-shaped semiconductor regions having conductivity type opposite to that of the mesas forming U-shaped pn junctions and defining a plurality of laterally spaced long and vertical channels with a highly uniform channel opening dimension. A source contact is formed on the top source layer and a drain contact is formed on the bottom drain layer. A gate contact is formed on the bottom of the U-shaped trenches for the purpose of creating and interrupting the vertical channels so as to turn on and turn off the transistor.
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申请公布号 |
US7479672(B2) |
申请公布日期 |
2009.01.20 |
申请号 |
US20070784613 |
申请日期 |
2007.04.09 |
申请人 |
RUTGERS, THE STATE UNIVERSITY |
发明人 |
ZHAO JIAN H. |
分类号 |
H01L29/80;H01L29/10;H01L29/74;H01L29/808;H01L31/111 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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