| 摘要 |
A semiconductor device manufacturing method and a semiconductor device manufacturing apparatus which enable to detect an etching end-point with high accuracy are provided. In etching of a lower layer formed on a semiconductor wafer using a mask which comprises a plurality of patterns extending in a predetermined direction (line-and-space patterns) and contains at least one of a metal layer and an electrically-conductive metal compound layer, the surface of the semiconductor wafer is irradiated with inspection light, the etching is performed while monitoring the intensity of the polarized light component perpendicular to the predetermined extending direction of the line-and-space patterns and the etching is terminated at the time the intensity of the polarized light component reaches a reflected light intensity corresponding to a desired remaining thickness of the lower layer.
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