| 摘要 |
The invention is related to an essentially new technology which is based on Quantum Confinement effect in semiconductor nanostructures, and it can be used for manufacturing of semiconductor devices. A possibility to create the graded band-gap structure on a surface layer of elementarily semiconductor by laser radiation is shown. The main role in graded band-gap structure formation has Quantum Confinement effect in nanocrystalline particles. If the cone radius is equal or less than Bohr's radius of exciton, than Quantum Confinement effect will takes place and band-gap of the semiconductor will be increasing. As the diameter of cross-section of cone like nanostructures is a function of cone height, then there is a possibility to monotonously increase the band-gap in the direction of the top of the cone in an elementary simiconductor. During irradiation of Si sample by strongly absorbed laser a huge gradient of temperature is formed, which initiate the drift of interstitial atoms of Si to the irradiated surface. As a result, the crystalline nanocones on the semiconductor surface are formed, with radii which are monotonously decreasing toward the nanocones top, therefore a graded band-gap structure in elementary semiconductors is formed. |
