| 摘要 |
A silicon epitaxial wafer manufacturing method, in which a vapor phase growth of a silicon epitaxial layer is performed on a front surface of a silicon single crystal substrate (W) arranged in the reaction chamber (12). A silicon deposit deposited in the reaction chamber (12) is removed by etching an inside of the reaction chamber (12) with a hydrogen chloride gas in a state that a silicon crystal substrate (W) is not introduced, and thereafter, a primary cooling is performed in the reaction chamber (12). Subsequently, a secondary cooling is performed after heating an inside of the reaction chamber (12), and thereafter, the vapor phase growth is performed to manufacture a silicon epitaxial wafer.
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