发明名称 |
Process for producing GaN substrate |
摘要 |
A process for producing an inexpensive large high-quality GaN substrate which comprises forming a MgO buffer layer on a high-quality substrate, generating a ZnO layer on the MgO buffer layer while performing polarity control, growing a GaN layer on the ZnO layer while performing polarity control, and melting the ZnO layer, thereby producing a GaN substrate.
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申请公布号 |
US7479188(B2) |
申请公布日期 |
2009.01.20 |
申请号 |
US20050549018 |
申请日期 |
2005.09.15 |
申请人 |
TOHOKU TECHNO ARCH CO., LTD. |
发明人 |
YAO TAKAFUMI;SUZUKI TAKUMA;KO HANG-JU;SETIAWAN AGUS |
分类号 |
C30B25/18;C30B29/38;C30B25/02;C30B33/00 |
主分类号 |
C30B25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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