| 摘要 |
PROBLEM TO BE SOLVED: To provide a mist etching method capable of removing a used mask such as an oxide film by making an etching liquid such as a hydrofluoric acid into fine particles while using, e.g. a general-purpose adhesive film in manufacture of a semiconductor device. SOLUTION: The mist etching method is configured so that when a micromist is sprayed onto the surface of a semiconductor wafer to etch an existing structure on the wafer, a masking member used as a mask having anti-etching property in a prior etching step is selected as the existing structure, a functional element such as a circuit formed on the surface of the semiconductor wafer is covered with at least a protective member made of an adhesive film, and a micromist formed by making the etching liquid into fine particles and dispersing like mist in an inert gas is used. COPYRIGHT: (C)2009,JPO&INPIT |
