SEMICONDUCTOR SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate having a crystal semiconductor layer that can withstand practical use even if using a material differing from a semiconductor layer as a support substrate, and to provide a semiconductor device using the semiconductor substrate. SOLUTION: The semiconductor substrate has: a junction layer forming a junction surface between a support substrate and a single-crystal semiconductor layer; a barrier layer formed by an insulating material containing nitrogen; a relaxing layer formed by an insulating material containing 1-20 atom% hydrogen while nitrogen concentration is less than 20 atom%; and an insulation layer containing halogen. The above configuration is contained at least partially, and a gate insulation layer manufactured with SiH4and N2O as source gases by a microwave plasma vapor phase epitaxy method is in contact with the single-crystal semiconductor layer. COPYRIGHT: (C)2009,JPO&INPIT