| 摘要 |
PROBLEM TO BE SOLVED: To prevent an output MOS transistor from being damaged owing to breaking of a ground line. SOLUTION: In the semiconductor device, a switch NMOS transistor NM2 has its drain and source connected between the gate and source of the output NMOS transistor NM1 supplying an output current to a load 12, and also has its gate connected to an internal ground wire line GW connected to a ground terminal GND. A resistance element R1 connects the gate and source of the NMOS transistor NM2 to each other. When a voltage larger than a predetermined value is generated across the resistance element R1 at power-ON time owing to parasitic capacity present between a power supply terminal Vcc and the internal ground wire line GW, the NMOS transistor NM2 is turned on. Therefore, the NMOS transistor NM1 is turned off. COPYRIGHT: (C)2009,JPO&INPIT
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