| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a substrate structure capable of controlling the threshold voltage of a MOS transistor, without depending on the substrate concentration and readily suppressing short-channel effect caused by reducing the channel length. <P>SOLUTION: A first nanosilicon film 201 formed from nanosilicon grains having the same grain size is formed on a silicon oxide film 200A on the surface of a silicon substrate 200. After a silicon nitride film 201A is formed on the first nanosilicon film 201, a second nanosilicon film 202, having an average grain size different from that of the first nanosilicon film 201, is formed. A semiconductor circuit device is formed on a nanosilicon semiconductor substrate, manufactured in this way. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
