| 摘要 |
PROBLEM TO BE SOLVED: To improve malfunction tolerance of a reverse-blocking three-terminal thyristor. SOLUTION: A semiconductor substrate 1 for constituting the reverse-blocking three-terminal thyristor has first, second, and third N-type semiconductor regions N1, N2, and N3 and first and second P-type semiconductor regions P1 and P2. The first P-type semiconductor region P1, the first N-type semiconductor region N1, the second P-type semiconductor region P2, and the second N-type semiconductor region N2 are disposed in order from the side of one main surface 2 of the semiconductor substrate 1 to the other main surface 3. A third N-type semiconductor region N3 is disposed on the one main surface 2 of the semiconductor substrate 1. A first main electrode T1 is connected to the first P-type semiconductor region P1, a second main electrode T2 is connected to the second P-type semiconductor region P2 and second N-type semiconductor region N2, and a gate electrode G is connected to the first P-type semiconductor region P1 and third N-type semiconductor region N3. COPYRIGHT: (C)2009,JPO&INPIT
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