| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device of a MONOS structure in which a penetration phenomenon hardly occurs in ion implantation. SOLUTION: The nonvolatile semiconductor memory device is provided with: a semiconductor substrate 1 having a main surface; source/drain regions 2, 3 formed on the main surface; a first gate insulating film 17; an ONO film 13 (second gate insulating film) having a charge accumulating layer; a control gate electrode 12 (first gate electrode) having a side wall; a memory gate electrode 11i (second gate electrode) formed on the ONO film 13; and a protective film 18a formed so as to contact the memory gate electrode 11i. The memory gate electrode 11i includes a vertically extending portion extending along the side wall of the control gate electrode 12 and a horizontally extending portion extending along the main surface when viewed from a cross-sectional surface, and has an L-shape formed by continuation of both the portions. The protective film 18a covers the horizontally extending portion from a side opposite to the semiconductor substrate 1. COPYRIGHT: (C)2009,JPO&INPIT
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