发明名称 SUBSTRATE PROCESSING APPARATUS AND FABRICATION PROCESS OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which can restrain upsizing while increasing the number of treatment containers being contained in the substrate processing apparatus body. SOLUTION: The substrate processing apparatus 100 includes a furnace 202 for processing a wafer 200, a load port 114 used for carrying a pod 110 containing the wafer 200 into a housing 111 and for carrying out the pod 110 from the housing 111, a mechanism 118b used for conveying the pod 110 from the load port 114, and an upper containing section 250 arranged above to overlap the treatment furnace 202 at least partially in the gravitational direction. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009010009(A) 申请公布日期 2009.01.15
申请号 JP20070167532 申请日期 2007.06.26
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 YUYA YUKINORI;NAKAJIMA MASAYO
分类号 H01L21/31;C23C16/44;H01L21/22;H01L21/677 主分类号 H01L21/31
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