| 摘要 |
A wafer working method which is capable of feeding a wafer diced by a laser dicing apparatus to a subsequent step without breaking the wafer. The wafer working method involves: a first machining step of grinding a reverse side of a wafer W and then polishing the reverse side of the wafer thus ground to a thickness which is larger than a finally worked wafer thickness; a modified region forming step of irradiating laser light to a region of the wafer thus subjected to the first machining which lies inwardly of a modification-free zone measuring 0.1 mm to 10 mm from a periphery of the wafer, to form a modified region inside the wafer; and a second machining step of grinding the reverse side of the wafer thus formed with the modified region and then polishing the reverse side of the wafer thus ground to the finally worked wafer thickness. |
