| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a group III-V semiconductor layer capable of adjusting the nitrogen flux, a method for producing a quantum-well structure, and to provide a nitrogen source device. SOLUTION: The method is provided with a first step of depositing a first group III-V semiconductor layer on a substrate, by supplying a nitrogen flux and other material fluxes via an opened aperture out of apertures 26a, and the like; a second step of changing the number of apertures to be opened; and a third step of depositing a second group III-V semiconductor layer on the first group III-V semiconductor layer, by supplying nitrogen flux and other material fluxes via an opened aperture after the second step, wherein the nitrogen composition of the first group III-V semiconductor layer is different from that of the second group III-V semiconductor layer. COPYRIGHT: (C)2009,JPO&INPIT
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