| 摘要 |
The semiconductor device according to the present invention is a Fin-FET that can substantially increase the channel width without unnecessarily elevating the height of the Fin. The Fin-FET has gate electrodes 22 formed on the upper surface, both left and right sides and the bottom surface of channel-forming semiconductor layer 11a formed by processing semiconductor substrate 11 into a fin shape; and a channel region the four surfaces of which are surrounded by gate electrodes 22.
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