发明名称 |
III-Nitride Semiconductor Light Emitting Device and Method for Manufacturing the Same |
摘要 |
Disclosed herein is a IE-nitride semiconductor light emitting device comprising a plurality of nitride semiconductor layers including a substrate and an active layer deposited on the substrate, in which the substrate is provided with protrusions to let the lights generated in the active layer emit out of the light emitting device and each of the protrusions has a first scattering plane and a second scattering plane, which are not parallel to each other.
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申请公布号 |
US2009014751(A1) |
申请公布日期 |
2009.01.15 |
申请号 |
US20050795995 |
申请日期 |
2005.10.06 |
申请人 |
KIM CHANG-TAE;KIM KEUK;YOO TAE KYUNG |
发明人 |
KIM CHANG-TAE;KIM KEUK;YOO TAE KYUNG |
分类号 |
H01L21/00;H01L33/00;H01L33/22;H01L33/32 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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