| 摘要 |
A disclosed organic thin-film transistor includes a gate electrode formed on a substrate, a gate insulation film formed on the gate electrode, a source electrode and a drain electrode formed, with a gap inbetween, at least over the gate electrode on which the gate insulation film is formed, an organic semiconductor layer formed in a region including the gap, an interlayer insulation film formed to cover the organic semiconductor layer, and a conductive layer formed on the interlayer insulation film and connected to the drain electrode. A part of the organic semiconductor layer is formed on the interlayer insulation film.
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