PHASE CHANGE MEMORY DEVICE AND METHODS OF FABRICATING THE SAME

摘要

A phase change memory device and a manufacturing method thereof are provided to reduce a current supplied in reset operation by reducing interface dimensions between a phase change pattern and a bottom electrode in which joule heat is generated. Bit lines(BL) are parallel arranged with a vertical direction. Word lines(WL) are parallel arranged with a horizontal direction. The bit lines intersect with the word lines. Each phase change pattern(Rp) is arranged on an intersection of the bit lines and the word lines. Each diode(D) is serially connected to one corresponding to each phase change pattern. Each phase change pattern is connected to one corresponding to each bit line. Each diode is connected to one corresponding to each word line.